Irfbe30 datasheet на русском.Наименование прибора: IRFBE30. Тип транзистора: MOSFET. Максимальная рассеиваемая мощность (Pd): 125 W. Предельно допустимое напряжение сток-исток (Uds): 800 V. Предельно допустимое напряжение затвор-исток (Ugs): 10 V. Пороговое напряжение включения Ugs(th): 4 V. Максимально допустимый постоянный ток стока (Id): 4.1 A. Максимальная температура канала (Tj): 150 °C. Общий заряд затвора (Qg): 78 nC. Сопротивление сток-исток открытого транзистора (Rds): 3 Ohm. Тип корпуса: TO220AB. IRFBE30 Datasheet (PDF) ?IRFBE30S, SiHFBE30S, IRFBE30L, SiHFBE30L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) 800 Definition RDS(on) (?)VGS = 10 V 3.0 • Dynamic dV/dt Rating Qg (Max.) (nC) 78 • Repetitive Avalanche Rated Qgs (nC) 9.6 • Fast Switching Qgd (nC) 45 • Ease of Paralleling Configuration Single • Simple Drive Requirem. 1.2. irfbe30.pdf Size:167K _international_rectifier. 1.3. irfbe30s-l.pdf Size:589K _international_rectifier. PD - 95507 IRFBE30SPbF IRFBE30LPbF HEXFET? Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated D Fast Switching VDSS = 800V Ease of Paralleling Simple Drive Requirements RDS(on) = 3.0? Lead-Free G >1.4. irfbe30pbf.pdf Size:2101K _international_rectifier. PD - 94945 IRFBE30PbF ? Lead-Free 1/15/04 Document Number: 91118 www.vishay.com 1 IRFBE30PbF Document Number: 91118 www.vishay.com 2 IRFBE30PbF Document Number: 91118 www.vishay.com 3 IRFBE30PbF Document Number: 91118 www.vishay.com 4 IRFBE30PbF Document Number: 91118 www.vishay.com 5 IRFBE30PbF Document Number: 91118 www.vishay.com 6 IRFBE30PbF TO-220AB Package Outline. IRFBE30, SiHFBE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY ? Dynamic dV/dt Rating VDS (V) 800 Available ? Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 3.0 RoHS* ? Fast Switching Qg (Max.) (nC) 78 COMPLIANT ? Ease of Paralleling Qgs (nC) 9.6 Qgd (nC) 45 ? Simple Drive Requirements Configuration Single ? Compliant to RoHS Directive 2002/95/EC D DESCRIPTION TO-2. IRFBE30S, SiHFBE30S, IRFBE30L, SiHFBE30L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY ? Halogen-free According to IEC 61249-2-21 VDS (V) 800 Definition RDS(on) (?)VGS = 10 V 3.0 ? Dynamic dV/dt Rating Qg (Max.) (nC) 78 ? Repetitive Avalanche Rated Qgs (nC) 9.6 ? Fast Switching Qgd (nC) 45 ? Ease of Paralleling Configuration Single ? Simple Drive Requirements D ? Compli. |
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